. 2020 Jul 1;2(7):2049–2056. doi: 10.1021/acsaelm.0c00311

Table 2. Contribution of an Individual Asymmetric Σ5 GB in Cu to the Resistivity of the Adjacent Single Crystal Measured by van der Pauw and Four-Point-Probe Techniques^a.

	GB resistivity contribution to adjacent Cu single crystal
GB type	absolute value (μΩ·cm)	relative value (%)
asym. Σ5 (van der Pauw)	0.052 ± 0.007	3.07 ± 0.4
asym. Σ5 (four-point probe)	0.048 ± 0.007	2.84 ± 0.4
twin GB – literature²⁴	0.07	4.19
high angle GB – literature²⁴	0.14	8.38

Differences between bicrystal and single crystal resistivities are presented. The average values reported in the literature are presented for comparison.

Table 2. Contribution of an Individual Asymmetric Σ5 GB in Cu to the Resistivity of the Adjacent Single Crystal Measured by van der Pauw and Four-Point-Probe Techniquesa.

Table 2. Contribution of an Individual Asymmetric Σ5 GB in Cu to the Resistivity of the Adjacent Single Crystal Measured by van der Pauw and Four-Point-Probe Techniques^a.