Skip to main content
. 2020 Jul 30;10:12890. doi: 10.1038/s41598-020-69523-9

Figure 1.

Figure 1

Schematic cross sections of two lateral WSe2 p–i–n junctions: (a) with top gate (5.3 nm Al2O3), (b) without top gate. (c) TEM image of contact region (Pd/Ti/WSe2) of device D1 and (d) device D2. The TEMs correspond to the same devices for which electrical measurements are reported.