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. 2020 Jul 30;10:12890. doi: 10.1038/s41598-020-69523-9

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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COMSOL simulations of the EDL p–i–n junction in WSe₂. (a) Simulated device structure, representing a scaled-version of the fabricated device consisting of a 100 nm WSe₂ channel and including source, drain, and backgate metal contacts, with PEO:CsClO₄ on the surface. PEO:CsClO₄ is modeled as a dielectric with ε_PEO = 7 and a concentration of 1,000 mol/L of monovalent ions. A thin, 0.3 nm vacuum layer at the metal/semiconductor interfaces with PEO:CsClO₄ represents the effect of the Helmholtz layer. (b) Computed steady-state ion profile after a bias of V_D = − V_S = 2 V is applied at the drain/source metal contacts. (c) Simulated band diagram along the channel length after the ion locking step at 220 K. (d) Charge density profile along the same cut showing an accumulation of image charges at the two ends of the channel, several orders of magnitude higher than that concentration in the middle of the channel.