Fig. 2. Hall effects in KV₃Sb₅.

(A) The Hall resistivity of KV₃Sb₅ with the current applied in the ab plane and the magnetic field applied along the c axis. The AHE shows up as antisymmetric S shape in the low-field region for all temperature below 50 K. At low temperatures and high-field regime, the Hall resistivity exhibits a typical two-band behavior. (B) Extracted electron carrier concentration and mobility in the one-band regime. Inset: The Hall response of KV₃Sb₅ above 75 K. (C) Extracted ${\mathrm{\rho }}_{\mathit{xy}}^{\mathit{\text{AHE}}}$ taken by subtracting the local linear ordinary Hall background at various temperatures. The inset shows the converted ${\mathrm{\sigma }}_{\mathit{xy}}^{\mathit{\text{AHE}}}$ at various temperatures by inverting the resistivity tensor.