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. 2020 Jul 31;6(31):eabb6003. doi: 10.1126/sciadv.abb6003

Fig. 3. AHE in KV3Sb5.

Fig. 3

(A) Angular dependence of σAHE at 2 K as the μ0H is tilted from out-of-plane to in-plane. The inset shows the σAHE against cos(θ). (B) Extracted σAHE versus σxx2 for various devices with thickness ranging from 30 to 128 nm. Solid lines are fittings to the equation shown in the inset to extract the skew scattering constant (α) and intrinsic AHC (b) for each device. The inset shows the extracted intrinsic σAHE for all six devices. Larger error is seen for samples 1 to 3 due to the size of the dominating extrinsic component. (C) The ratio between σAHE and σxx for six KV3Sb5 devices and for Fe. The black lines guide the eye to illustrate the increasing tendency of σAHExx for KV3Sb5 and for Fe.