Table 2.
Comparison of Subthreshold (Sublethal) Diode Micropulse Laser Arrhenius Integrals, Therapeutic and Cell Death Thresholds for the Vujosevic et al.45 577 and 810 nm SDM Parameter Sets
| P (Treatment) | Arrhenius | P (Reset) | P (Death) | TR | SM | |
|---|---|---|---|---|---|---|
| Wavelength45 | Laser Power Watts | Integral for HSP activation | Watts | Watts | Watts | Watts |
| 577 | 0.25 | 2.59 | 0.16 | 0.45 | 0.29 | 0.20 |
| 810 | 0.75 | 0.84 | 0.85 | 2.67 | 1.82 | 1.92 |
P (Reset) = power required for the HSP activation Arrhenius integral to reach a value of unity; P (Death) = power required for the Arrhenius integral for damage to reach a value of unity, marking the upper limit of the therapeutic range, avoidance of RPE damage being a desirable end of treatment. TR = therapeutic range = P (Death) – P (Reset), or the width (expressed in laser power) of the nominal effective interval for SDM treatment sublethal to the RPE. The laser powers delineating the P (Reset) and P (Death) vary based on the particular combinations of each of the other laser parameters, including wavelength, duty cycle, pulse duration, and spot size. SM = safety margin = P (Death) – P (Treatment). The powers for the P (Reset) and P (Death) assume an Arrhenius integral for HSP activation of 1.0.