Table 5.
Nanowire-based strain and pressure sensors.
| Material | Device Type | Device Structure | Sensitivity | Etc. | References |
|---|---|---|---|---|---|
| ZnO NW | Strain sensor | Schottky back-to-back | Gauge factor 1250 | [29] | |
| ZnO NW | Strain sensor | Schottky back-to-back | ~ 6 μA/strain change % | Logic gates | [30] |
| ZnO NW (Vertical) |
Strain sensor | Schottky back-to-back, single Schottky |
[32] | ||
| ZnO NW bundle array | Pressure sensor | Schottky contact passive-matrix array | 2.1 μS kPa−1, Spatial resolution 100 μm |
92 × 92 sensor array | [33] |
| ZnO NW bundle | Pressure sensor | MgO barrier layer(tunneling modulation) | 7.1 × 104 /9.81 mN Response time 128 ms |
[34] |