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. 2020 Jul 9;13(14):3067. doi: 10.3390/ma13143067

Figure 4.

Figure 4

Etching and shrinking of a single MoS2 flake. (A,B) show topography images of the flake, with the Z-scale of several nanometers only in each. (A) is centered on a basal flake surface and (B) is centered on a surface of the silicon substrate. (C) presents a topographical cross-section taken laterally in a middle of the flake, as shown in A and B, in red. The flake is 12 ± 2 nm thick.