Fig. 3.

(A) Representative XRR measurements (circles) and model fits (lines) of IGO:PVA films. (B) EXAFS measurements at the In K-edge and Ga K-edge. (C) R-SoXS of neat IGO and IGO with 8 wt. % PVA; film thickness is increased to ∼40 nm to increase signal-to-noise ratio. (D) Molar ratios of H vs. GaO₂ (solid lines) and OH vs. GaO₂ (dashed lines) in IGO:PVA films from ToF-SIMS depth profiles. (E) ATR FT-IR of the IGO:PVA films; film thickness is increased to 20 nm to amplify the signal-to-noise ratio.