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. 2020 Jun 30;7(16):2001013. doi: 10.1002/advs.202001013

Figure 6.

Figure 6

Device analysis. a) Temperature‐dependent V OC, and b) J SC versus light intensity, and c) V OC decay curves, and d) C −2V curves, and e) JV curves under dark conditions of Sb2Se3 devices with and without t‐Se layer, respectively. f) Long‐term stability of Sb2Se3 devices with t‐Se layer and with Spiro‐OMeTAD layer.