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. 2020 Aug 27;11:4309. doi: 10.1038/s41467-020-18006-6

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a Photograph of CuI:Zn_5mol% TFT array on a 4-inch Si/SiO₂ (100 nm) wafer substrate (dot line means measurement area). b, c Statistical results of μ_sat and I_on/I_off obtained from 96 TFTs across the array. d–f Voltage transfer, gain, current characteristics, and noise margin (NM) extraction of the complementary inverter based on n-type IGZO/SiO₂ and p-type CuI:Zn/SiO₂ TFTs.