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. 2020 Jul 13;2(8):2601–2610. doi: 10.1021/acsaelm.0c00489

Figure 4.

Figure 4

Experiment and simulated I–V and I–t characteristics of the thin and bendable EG-ISFETs. (a) Measured (compact lines) and simulated (dotted lines) ISFET transfer characteristics at pH 5, 7, and 9 at planar condition. Measured transfer characteristics are also shown in a semilogarithmic scale with dotted lines. (b) Measured (compact lines) and simulated (dotted lines) ISFET transfer characteristics at pH 5 under planar (red line), 21 × 10–4 nominal compressive strain (yellow line), and 21 × 10–4 nominal tensile strain (blue line). Measured transfer characteristics are also shown in a semilogarithmic scale with dotted lines. (c) Measured (compact lines) and simulated (dotted lines) ISFET transfer characteristics at pH 7 under planar (red line), 21 × 10–4 nominal compressive strain (yellow line), and 21 × 10–4 nominal tensile strain (blue line). Measured transfer characteristics are also shown in a semilogarithmic scale with dotted lines. (d) Measured (compact lines) and simulated (dotted lines) ISFET transfer characteristics at pH 9 under planar (red line), 21 × 10–4 nominal compressive strain (yellow line), and 21 × 10–4 nominal tensile strain (blue line). Measured transfer characteristics are also shown in a semilogarithmic scale with dotted lines. (e–g) Measured and simulated ISFET transient response at pH 5, 7, and 9 at planar condition. (h) rms error between measured and simulated results. All measurements and simulations were performed at VRE = VGS = 2 V and VDS = 0.4 V.