Experiment and simulated I–V and I–t characteristics
of the thin and bendable EG-ISFETs. (a) Measured (compact lines) and
simulated (dotted lines) ISFET transfer characteristics at pH 5, 7,
and 9 at planar condition. Measured transfer characteristics are also
shown in a semilogarithmic scale with dotted lines. (b) Measured (compact
lines) and simulated (dotted lines) ISFET transfer characteristics
at pH 5 under planar (red line), 21 × 10–4 nominal
compressive strain (yellow line), and 21 × 10–4 nominal tensile strain (blue line). Measured transfer characteristics
are also shown in a semilogarithmic scale with dotted lines. (c) Measured
(compact lines) and simulated (dotted lines) ISFET transfer characteristics
at pH 7 under planar (red line), 21 × 10–4 nominal
compressive strain (yellow line), and 21 × 10–4 nominal tensile strain (blue line). Measured transfer characteristics
are also shown in a semilogarithmic scale with dotted lines. (d) Measured
(compact lines) and simulated (dotted lines) ISFET transfer characteristics
at pH 9 under planar (red line), 21 × 10–4 nominal
compressive strain (yellow line), and 21 × 10–4 nominal tensile strain (blue line). Measured transfer characteristics
are also shown in a semilogarithmic scale with dotted lines. (e–g)
Measured and simulated ISFET transient response at pH 5, 7, and 9
at planar condition. (h) rms error between measured and simulated
results. All measurements and simulations were performed at VRE = VGS = 2 V and VDS = 0.4 V.