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. 2020 Jul 24;11(8):718. doi: 10.3390/mi11080718

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© 2020 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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(a) Extraction of the transconductance (gm) from drain current vs. gate voltage characteristics; (b) extraction of the output conductance (g₀) from drain current vs. drain voltage characteristics. As an example, characteristics of the n-channel MOSFET with L = 1 μm and W = 5 μm are shown. V_d = 1.00 V for (a), and V_g = 1.09 V for (b).