Table 1.
Assumed device parameters and dimensions.
| Parameter | Fabricated Device Dimension (µm) |
Assumed Device Dimension (µm) |
|---|---|---|
| Heater length of metal-oxide-semiconductor field-effect transistor (MOSFET) and diode | 15 | 15 |
| Heater width (gate length) of MOSFET and diode | 1 | 1 |
| Channel width of MOSFET | 5 | 5 |
| Width of pn-junction diode | 50 | 5 |
| Thermistor length of resistive bolometer | 100 | 15 |
| Thermistor width of resistive bolometer | 1 | 0.6 |
| Heater length of resistive bolometer | 100 | 15 |
| Heater width of resistive bolometer | 1 | 1 |
| Antenna width (Want) | × | 5.2 |
× The half-wave gold dipole antenna was not fabricated.