Table 3.
Extent of the electrothermal feedback (ETF) effect. The temperature coefficient of resistances (TCRs) for MOSFETs and diodes are effective values.
| Bolometers | T1−To (K) | TCR (K−1) | (T1−To)α (%) |
|---|---|---|---|
| N-channel MOSFET | 2.86 | −6.18 × 10−2 | −17.6 |
| P-channel MOSFET | 2.86 | −1.71 × 10−2 | −4.9 |
| Diode (without body doping) | 2.53 | −1.22 × 10−3 | −0.31 |
| Diode (with p-body doping) | 2.53 | −1.19 × 10−3 | −0.30 |
| Resistive (n+ single crystalline Si) | 4.74 × 10−2 | 1.57 × 10−3 | ~0 |
| Resistive (p+ single crystalline Si) | 1.85 × 10−1 | 9.83 × 10−4 | ~0 |
| Resistive (polycrystalline Si) | 3.32 × 10−2 | 1.15 × 10−3 | ~0 |