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. 2020 Jul 23;10(8):1437. doi: 10.3390/nano10081437

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© 2020 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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(a) Potentiation and depression response of Ag/SiO_x:Ag/TiO_x/p⁺⁺-Si device with repeated voltage sweeps. (b) Conductance modulation and (c) PPF of Ag/SiO_x:Ag/TiO_x/p⁺⁺-Si device by repeating consecutive pulses. (d) Repeated STP response with the model fitting of TiO_x-based RRAM device, reproduced from [158], with permission from Springer Nature, 2020. (e) Synaptic facilitation response to consecutive pulses of the device with h-BN, reproduced from [159], with permission from Elsevier, 2020.