Table 2.

RRAM devices with various materials as electrodes.

Electrode Materials	Thickness (nm)	Electrode Mode	Switching Mode	VSET (V)	VRESET (V)	ON/OFF Ratio	Ref.
Hf	~40	TE	Bipolar	~4	~-4	~103	[129]
Al	~40	TE	Bipolar	~2	~-2	>102	[27]
Ti	~100	TE	Bipolar	~0.5	~-1.5	~103	[8]
Zr	~40	TE	Bipolar	~2	~-4	~103	[129]
Cr	~70	TE	Bipolar	~1.5	~-1.5	~104	[130]
Ni	~40	TE	Bipolar	~1.0	~-1.0	~103	[9]
Cu	~150	TE	Bipolar	~2.0	~-2.0	~103	[10]
Ag	~140	TE/BE	Bipolar	~2.0	~-2.0	~10	[11]
Pt	~200	BE	Bipolar	~6.0	~-5.0	~103	[12]
Au	~50	TE/BE	Bipolar	~1.0	~-2.0	~102	[78]
Graphene	N. A	TE	Unipolar	~1.0	~-1.0	~104	[131]
ITO	~50	BE	Bipolar	~1.5	~-1.0	~102	[20]
TiN	~20	TE	Bipolar	~0.5	~-1.0	~102	[85]
TaN	~60	TE	Bipolar	~1.5	~-1.0	~102	[20]
p-type Si	~100	BE	Bipolar	~2	~-2	>102	[27]