Table 1. Photovoltaic Parameters of Devices Based on (MeO-TPD)TFSI, Spiro(TFSI)2, and the Reference Cella.
| Voc (V) | Jsc (mA cm–2) | FF | η (%) | |
|---|---|---|---|---|
| Spiro+LiTFSI+TBP+FK209 (reference) | 1.08 ± 0.03 (1.10) | 22.6 ± 0.1 (22.8) | 0.74 ± 0.02 (0.76) | 18.1 ± 0.7 (19.1) |
| Spiro+TBP+30% (MeO-TPD)TFSI | 1.07 ± 0.02 (1.08) | 22.6 ± 0.2 (22.8) | 0.74 ± 0.01 (0.75) | 17.9 ± 0.4 (18.6) |
| Spiro+TBP+15% Spiro(TFSI)2 | 1.01 ± 0.04 (1.06) | 22.4 ± 0.3 (22.7) | 0.71 ± 0.03 (0.74) | 16.1 ± 1.0 (17.8) |
a
All HTLs contain TBP as an additive, and in addition, the reference cell contains LiTFSI as a co-dopant. The fabricated devices are based on SnO2 as the electron transport material and (FA)0.91(MA)0.09Pb(I3)0.91(Br3)0.09 as the active layer. The average data are obtained from 15 devices. The bracketed numbers are from champion cells.