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. 2020 Jun 23;21(1):371–378. doi: 10.1080/14686996.2020.1775477

Figure 1.

Figure 1.

(a) Schematic 2D cross-sectional image of a fabricated EG-ISFET sensor, consisting of a high-k engineered top gate oxide (SiO2/Ta2O5), an in-plane control gate, and an EG with a SnO2 sensing membrane, (b) photograph and (c) optical microscope image of a fabricated in-plane control gate a-IGZO TFT transducer on a PEN substrate. (d) Photograph of an EG detector fabricated on a separate PEN substrate.