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. 2020 Jun 23;21(1):371–378. doi: 10.1080/14686996.2020.1775477

Figure 2.

Figure 2.

(a) capacitance-voltage (C-V) and (b) current-voltage (I–V) curves of the fabricated MIM capacitors, with either a 20-nm-thick single SiO2 layer or a 10/35-nm-thick SiO2/Ta2O5 stacked layer.