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. 2020 Jun 23;21(1):371–378. doi: 10.1080/14686996.2020.1775477

Table 1.

pH sensing characteristics of EG-ISFETs with high-k engineered top gate insulators and in-plant control gates.

Device Operation mode Sensitivity (mV/pH) Hysteresis (mV) Drift rate (mV/hour) Hysteresis for sensitivity (%) Drift rate for sensitivity (%)
A SG 56 11 7 19 13
DG 581 32 60 6 10
IG 1435 77 76 5 5
B SG 56 12 14 22 25
DG 1039 74 60 7 6
IG 2364 115 109 5 5