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. 2020 Sep 10;9:160. doi: 10.1038/s41377-020-00396-3

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Schematic of the crystal structure and band structure of monoclinic and rutile VO₂. b Output characteristics of the P(VDF-TrFE)-gated VO₂ FET; the insets show the schematic and corresponding optical image. Scale bar, 20 μm. c Resistivity of the VO₂ film measured under vacuum as a function of temperature (red, heating; blue, cooling). The lower points and fitted curves show the abs(slope) of the resistivity. d Transfer characteristics at V_ds = 1 V of the VO₂ FET.