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. 2020 Aug 13;124(36):19858–19863. doi: 10.1021/acs.jpcc.0c05749

Figure 2.

Figure 2

Transient response of a Ge NW FET device for a fixed bias voltage of VS = 0.1 V and abrupt changes in the gate voltage measured at T = 300 K (black) and T = 80 K (blue). The green shaded region marks the electron-dominated transport regime. The length and diameter of the actual NW is L = 920 nm and d = 30 nm, respectively.