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. 2020 Aug 13;124(36):19858–19863. doi: 10.1021/acs.jpcc.0c05749

Figure 3.

Figure 3

Cross-sectional band structure of a Ge NW device to illustrate the transient behavior of the gate-controlled redistribution of charged surface traps: (i) Ge NW at VG = 0 V in equilibrium. (ii) Applying a negative gate voltage lowers the Fermi level, which results in the discharging of the surface traps. (iii) Equilibrium is reached with VG = −15 V and fewer traps are filled. (iv) Applying a positive gate voltage lifts the Fermi level and results in downward band bending and thus inversion at the surface. (v) The continuous filling of traps causes the NW to reach equilibrium again with a higher number of traps filled.