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. 2020 Sep 1;117(37):22920–22931. doi: 10.1073/pnas.2004489117

Fig. 4.

Fig. 4.

HuGL18 B cells develop memory after eOD-GT8 60mer immunization. (A) Mice were assessed by flow cytometry for HuGL18 memory B cell formation in the spleen on day 36 postimmunization with eOD-GT8 60mer. eOD-GT8-KO 60mer immunization was done as a negative control. Precursor frequency of HuGL18 naive B cells was 1 in 106 before immunization. Memory B cells were gated as SSL/B220+/CD4/IgD/CD38+/GL7/CD45.2+/CD45.1. (B) Quantitation of memory B cells in A, as percent of B220+ B cells. (C) Flow cytometric analysis of class switched memory B cells gated in A. (DE) Quantitation of (D) HuGL18 class switched memory B cells gated as IgM B cells and (E) HuGL18 IgG1+ memory B cells on day 36 postimmunization. (F and G) Memory B cells phenotypes. (F) Representative flow cytometry and (G) quantitation of indicated memory B cell markers on memory HuGL18 B cells on day 36. Red histograms are total non-BGC cells (SSL/B220+/CD4/CD38+/GL7). n = 3. n = 4 to 7 mice per experiment. Mem, memory; Con, control.