Figure 2.

Electronic Performance of Flexible In₂O₃ Nanoribbon Field-Effect Transistors

(A) Representative transfer characteristics of an In₂O₃ nanoribbon transistor with L = 500 μm, W = 25 μm, and H = 16 μm in phosphate buffered saline. The I_D (drain current) is shown in a logarithmic scale (left, black trace) and a linear scale (right, blue trace); V_GS is the gate-source voltage. The applied drain-source voltage V_DS was 0.2 V.

(B) Output curves in the linear and saturation regimes. In this plot, I_DS is a function of V_DS with V_GS from 0 to 1 V in 0.2-V steps.

(C) Plot of the charge-carrier mobilities of 56 transistors in an array.

(D) Histograms showing on-currents and threshold voltages from the same 56 transistors. The average mobility was 17.8 ± 1.8 cm² V⁻¹ s⁻¹. The average on-current was 0.86 ± 0.1 μA. The average threshold voltage was 0.27 ± 0.02 V.

See also Figure S2.