Figure 4.

SEM images of selected CNW morphologies of samples processed at varying process parameters: a) argon carrier gas flow rate, b) process pressure, c) substrate temperature, and d) hydrogen addition. Only one parameter was varied at a time, while the pressure was kept constant at 14.5 Pa for a) and c) and at 10.5 Pa for d), the carrier gas flow rate was kept constant at 60 sccm for b–d), and the temperature was kept constant at 350 °C for a), b) and d). All four process parameters influence the density and thickness of the CNWs. High pressures and low carrier gas flow rates enable a morphology transition from CNWs to nanoflakes.