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. 2020 Sep 23;11:4806. doi: 10.1038/s41467-020-18521-6

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a Bias voltage dependence of I_DS. Top inset is the schematic of the measurement geometry. Bottom inset is the differential resistance as a function of applied bias. b Magnetic field dependence of electrical resistance measured at T = 1.6 K. The observation of a two-plateau response indicates the presence of antiferromagnetic ground-state ordering. Inset shows the magneto-transport measurements for a ~7-nm-thick metallic PtSe₂. c Bias dependence of the change in device resistance as a result of the magnetic field and corresponding MR percentage. All measurements are taken at 1.6 K. Inset shows the bias dependence of resistance and MR for a ~7-nm-thick metallic PtSe₂.