Skip to main content
. 2020 Sep 25;11:4872. doi: 10.1038/s41467-020-18544-z

Fig. 4. Dependence of the simulated responsivity and NEP on the geometry of the antenna and H-shaped gates.

Fig. 4

a Simulations of responsivity for TM-polarization for different antenna lengths. Different cases are presented: non-resonant antenna within the hBN RB spectral range (antenna total length of L = 1.8 μm, shown in green), semi-resonant antenna (L = 2.7 μm shown in blue, which corresponds to the experimental antenna) and resonant antenna (L = 4.8 μm, shown in red). b Simulations of responsivity and NEP as a function of gate tip width and graphene (following the exact shape of the gates) as shown in the schematic for TE-polarization at λ = 6.5 μm. The tip length is 855 nm, which includes the gap between the gates of 155 nm. The source-drain distance is 2.6 μm and electrodes width is 2 μm as in the measured device. c Same as b but as a function of the gate tip length as shown in schematic. The tip width is 500 nm.