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. 2020 Sep 4;117(38):23467–23476. doi: 10.1073/pnas.2001778117

Fig. 5.

Fig. 5.

DMFT k-integrated temperature dependence of Ce 4f states for CeCoIn5. (A and B) T-dependent k-integrated DMFT 4f-DOS spectra with (B) a Fermi-edge cutoff and experimental energy broadening of 15 meV. (C) Comparison of experimental and simulated T dependences of f-peak amplitudes after background subtraction. (D and E) Spectral weight image and stack plot of the T-dependent merging of the ground state and first excited CEF peaks. (F) (left) T dependence of the DMFT total FS volume converted to electron occupation (nFS) exhibiting an 1-electron gain at low T and (right) the DMFT total localized-f occupation (nf) exhibiting a tiny 0.01-electron loss at low T. Crystalline electric-field levels (CF1,2) and their crystal field sideband peaks (CF1,2) are labeled.