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. 2020 Oct 9;11:5092. doi: 10.1038/s41467-020-18914-7

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Ideality factors and effective barrier heights obtained from the thermionic emission model for I–V measurements on the hybrid GaN/PEDOT specimen show temperature dependencies which are characteristic for lateral inhomogeneities. Evaluation of the characteristics with the model of thermionic emission over a laterally inhomogeneous barrier yields a mean barrier height of about Φ_B,0m = 1.4 eV. The solid line represents a linear fit according to Eq. (3) for the effective barrier height. b Band diagram of the hybrid n-GaN/PEDOT structure. E_V, E_F, E_C, and E_Vac correspond to the valence band, Fermi level, conduction band and vacuum level, respectively.