Skip to main content
. 2020 Sep 10;10(9):1804. doi: 10.3390/nano10091804

Figure 5.

Figure 5

Electrical properties of bottom-gate-type IGZO NF FETs with different high-k dielectrics. (a,b) are curves of transfer characteristics (ID–VG) and (c,d) are curves of output characteristics (ID–VD). Dashed and solid lines indicate properties of FETs before and after postcalcination oxygen plasma treatment, respectively.