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. 2020 Sep 10;10(9):1804. doi: 10.3390/nano10091804

Figure 11.

Figure 11

Logarithmic plots of charge trapping time (τ) against inverse of temperature (1/T) for IGZO NF FETs based on different high-k dielectrics. (a) CFA-calcined and (b) MWA-calcined devices during PBTS test. (c) CFA-calcined and (b) MWA-calcined devices during NBTS test. Dashed and solid lines are fitting curves for data obtained before and after postcalcination oxygen plasma treatment, respectively.