Table 1.
Electrical parameters of IGZO NF FETs based on different high-k gate dielectrics.
| Method for Calcinating NFs | Gate Dielectric | w/o O2 Plasma Treatment | w/ O2 Plasma Treatment | ||||||
|---|---|---|---|---|---|---|---|---|---|
| VTH (V) | SS (mV/dec) | μFE (cm2/V·s) | ION/IOFF | VTH (V) | SS (mV/dec) | μFE (cm2/V·s) | ION/IOFF | ||
| CTA | SiO2 | 8.6 | 1703.8 | 1.27 × 10−4 | 0.07 × 103 | 3.1 | 676.1 | 1.69 × 10−3 | 2.82 × 103 |
| Al2O3 | 2.6 | 610.7 | 8.25 × 10−4 | 3.42 × 103 | 2.2 | 576.1 | 2.49 × 10−3 | 5.12 × 103 | |
| HfO2 | 2.4 | 504.6 | 1.28 × 10−3 | 4.31 × 103 | 2.4 | 409.4 | 4.02 × 10−3 | 8.42 × 103 | |
| ZrO2 | 1.6 | 491.3 | 2.07 × 10−3 | 5.10 × 103 | 2.7 | 327.8 | 4.47 × 10−3 | 1.02 × 104 | |
| Ta2O5 | 1.9 | 387.4 | 2.21 × 10−3 | 1.59 × 104 | 2.1 | 284.9 | 6.38 × 10−3 | 3.46 × 104 | |
| MWA | SiO2 | 2.2 | 568.4 | 2.48 × 10−2 | 0.25 × 104 | 0.9 | 250.6 | 9.92 × 10−2 | 7.93 × 104 |
| Al2O3 | 0.4 | 453.1 | 4.26 × 10−2 | 8.20 × 104 | 0.2 | 160.1 | 1.34 × 10−1 | 4.01 × 105 | |
| HfO2 | 1.3 | 162.9 | 6.54 × 10−2 | 1.58 × 105 | 0.3 | 155.7 | 2.06 × 10−1 | 5.82 × 105 | |
| ZrO2 | 0.6 | 127.3 | 1.09 × 10−1 | 3.83 × 105 | 0.6 | 125.7 | 4.96 × 10−1 | 1.51 × 106 | |
| Ta2O5 | 0.5 | 113.8 | 1.31 × 10−1 | 4.37 × 105 | 0.4 | 102.6 | 6.55 × 10−1 | 4.51 × 106 | |