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. 2020 Oct 15;10:17363. doi: 10.1038/s41598-020-74068-y

Figure 3.

Figure 3

Time evolution of ΔR/R for Si (left panel), Ge (center panel) and GaAs (right-hand panel). Probe wavelength are 450 nm, 550 nm and 650 nm for Si and GaAs, while for Ge E1 and E1+Δ transitions wavelength instead of 550 nm. Pump fluences were 16 mJ/cm2, 16 mJ/cm2 and 6.4 mJ/cm2 for Si, Ge and GaAs respectively.