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. 2020 Oct 17;172:112724. doi: 10.1016/j.bios.2020.112724

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Fig. 2 — Electrical characterization of suspended MoS₂ FET: Current-gate voltage curve at the constant bias 100 mV (a) back gating of supported MoS₂ (b) back gating of suspended MoS₂ with 90 nm channel length (c) Ionic gating of suspended MoS₂. Current-drain voltage characterization (a’) Supported MoS₂ with back gating voltage from −10 V to 30 V (b’) Suspended MoS₂ with back gating from −10 V to 30 V. (c’) Suspended MoS₂ with ionic liquid gating from −1 V to 1V.