Figure 2.
The electrical resistivity of nitrogen-doped 3C-SiC films as a function of (a) NH3 flow rate in deposition process and (b) annealing temperature reported by Wijesundara et al. Reproduced with permission from [124] published by Elsevier, 2003, (c) the resistivity and the conductivity of the 3C-SiC films as a function of NH3 content in the deposition process reported by Wijesundara et al. Reproduced with permission from [125] published by Elsevier, 2002, (d) effect of temperature on the electrical resistivity of 3C-SiC films with different nitrogen doping concentration: (a) 0, (b) 9%, (c) 17%, and (d) 30% reported by Latha et al. Reproduced with permission from [126] published by Elsevier, 2015.