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. 2020 Aug 24;11(9):799. doi: 10.3390/mi11090799

Figure 3.

Figure 3

SEM micrographs: (a) SiC film deposited by APCVD. Reproduced with permission from [29] published by the Materials Research Society (MRS), 1999, (b,c) cross-section of SiC film deposited on a Si cantilever beam by a low-temperature CVD process. Reproduced with permission from [59] published by Elsevier, 2002, (d) cross-section of a-SiC:H film deposited by PECVD. Reproduced with permission from [9] published by the Materials Research Society, 2006, (e) cross-section of SiNxCy layer deposited by PEALD. Reproduced with permission from [111] published by Elsevier, 2015, (f) cross-sectional TEM image of SiCxNy film deposited by thermal atomic layer deposition (ALD). Reproduced with permission from [113] published by the American Chemical Society, 2017.