Table 4.
References | Structural Layer |
Configuration | Device Size | Sensitivity | Bandwidth | |
---|---|---|---|---|---|---|
Material | Thickness (µm) | |||||
Schofield et al. [14] | Silicon | 75 | 1 Dof drive, 2 DoF sense |
- | 2.3 µV/(°/s) | 600 Hz |
Trusov et al. [15] | Silicon | 50 | 1 Dof drive, 2 DoF sense |
3 × 3 mm2 | 56 µV/(°/s) | 250 Hz |
Acar et al. [21] | Polysilicon | 100 | 1 Dof drive, 2 DoF sense |
4 × 4 mm2 | 0.0303 mV/(°/s) | 50 Hz |
Saqib et al. [18] | Nickle | 20 | 3 Dof drive, 1 DoF sense |
3.2 × 3 mm2 | 0.565 fF/rad/s | 1.2 kHz |
This work | Silicon | 25 | 3 Dof drive, 2 DoF sense |
4.2 × 4.2mm2 | 3.1 fF/rad/s, 198.9 µV/(°/s), 0.04 × 10−3 µm/(°/s) | 1.62 kHz |