Skip to main content
. 2020 Sep 17;11(9):862. doi: 10.3390/mi11090862

Table 4.

Comparison of the proposed multi-DoF MEMS gyroscope design with the literature.

References Structural
Layer
Configuration Device Size Sensitivity Bandwidth
Material Thickness (µm)
Schofield et al. [14] Silicon 75 1 Dof drive,
2 DoF sense
- 2.3 µV/(°/s) 600 Hz
Trusov et al. [15] Silicon 50 1 Dof drive,
2 DoF sense
3 × 3 mm2 56 µV/(°/s) 250 Hz
Acar et al. [21] Polysilicon 100 1 Dof drive,
2 DoF sense
4 × 4 mm2 0.0303 mV/(°/s) 50 Hz
Saqib et al. [18] Nickle 20 3 Dof drive,
1 DoF sense
3.2 × 3 mm2 0.565 fF/rad/s 1.2 kHz
This work Silicon 25 3 Dof drive,
2 DoF sense
4.2 × 4.2mm2 3.1 fF/rad/s, 198.9 µV/(°/s), 0.04 × 10−3 µm/(°/s) 1.62 kHz