Table 1.

Physical properties used in the simulation for the ElGoFET microphone.

Parameter	Value	Unit
Young’s modulus of silicon diaphragm, ESi	130 [19]	[GPa]
Poisson’s ratio of silicon diaphragm, vSi	0.28 [19]	-
Density of silicon diaphragm, ρSi	2300 [19]	[kg/m3]
Frequency constant of 1st-order resonance, Λ0	10.22 [19]	-
Mechanical quality factor of silicon, QSi	500 [20]	-
Viscosity of backing medium (air) µair	18.5 [10]	[µPa·s]
Sound velocity of medium (air), c0	313 [10]	[m/s]
Density of medium (air), ρ0	1.21 [10]	[kg/m3]

ElGoFET: electret gate on a field-effect transistor.