Table 2.
Neuromorphic 2D vdW Heterostructures Devices Based on 2D Materials
| Heterostructure Materials | Thickness (nm) | Electrode | Growth/Fabrication Method | Stacking Method | Working Principle | Retention Time (s) | Endurance (Cycle) | Power Consumption/Switching Voltage | Device | Ref. |
|---|---|---|---|---|---|---|---|---|---|---|
| Gr/MoS2 | MoS2: 21 | Ni (top) | CVD | Wet transfer | Grain boundary ion migration | – | 40 | 2.8–2.9 V | Artificial neuron | (Kalita et al., 2019) |
| Gr (bottom) | ||||||||||
| Gr/MoS2 | NA | Ni/Au (top) | CVD | Wet transfer | Conductive filament | 104 | 100 | 1.5 V | Synaptic memristor | (Krishnaprasad et al., 2019) |
| Gr (bottom) | ||||||||||
| Gr/MoS2-xOx/Gr | Gr: 8 | Au (top) | Exfoliation | PVA transfer | Ion migration | 105 | 107 | – | Flexible electronic device | (Wang et al., 2018) |
| MoS2-xOx: 40 | Au (bottom) | |||||||||
| MoS2/h-BN/Gr/h-BN | MoS2: 6 | Cr/Au (top) | Exfoliation | PVA transfer | Charge trapping/detrapping | – | 100 | 64 pJ | Human memory system | (Chen et al., 2019a) |
| h-BN: 7, 15 | Si (bottom gate) | |||||||||
| Gr/h-BN/MoS2 | h-BN: 3.5–12 | Cr/Au | Exfoliation | PVA transfer | Charge trapping/detrapping | 105 | 105 | 4.8 V | Flexible floating gate memories | (Vu et al., 2016) |
| Gr/WSe2 | WSe2: 30–60 | Cr/Pd/Au (top) | Exfoliation | Polymer-assisted transfer method | Conductive filament | 103 | 103 | 0.2 V | Artificial synaptic barristor | (Huh et al., 2018) |
| Ag (bottom) | ||||||||||
| h-BN/MoS2/h-BN/Gr or MoS2 | h-BN: 15–20 | Cr/Au (Top) | Exfoliation | Polymer-assisted transfer method | Charge trapping/detrapping | 104 | 300 | – | Multilevel optical memory | (Kim et al., 2019c) |
| MoS2: 3–17 | P++-Si (bottom) | |||||||||
| h-BN/MoS2/h-BN/MoS2 | MoS2: 10–14 | Cr/Au (top) | Exfoliation | Polymer-assisted transfer method | Charge trapping/detrapping | 104 | – | – | Flash memory devices | (Yi et al., 2018) |
| h-BN: 10–34 | Au, Al, Pd (bottom) | |||||||||
| h-BN/WSe2 | – | Ti, Au (control) | Exfoliation | Residue-free transfer method | Charge trapping/detrapping | – | 300 | 66 fJ at 0.3 V pulse | Optic-neural synaptic device | (Seo et al., 2018) |
| Pt/Au (synaptic) | ||||||||||
| Gr/h-BN/MoS2 | h-BN: 5–7 | Cr/Au (top) | Exfoliation | Dry-transfer method | Charge trapping/detrapping | – | 20 | 5 fJ | Floating gate memory | (Paul et al., 2019) |
| P++-Si (bottom) | ||||||||||
| BP/SnSe2 | BP: 6 SnSe2: 100 | Au | Exfoliation | Transfer method | Charge trapping/detrapping | – | – | 1 fJ for SET, 100 aJ for RESET | Synaptic memristor | (Tian et al., 2017a) |
| MoS2/PTCDA | Total: 10 | Au (top) | Exfoliation | Direct growth | Charge trapping/detrapping | – | – | 10 pJ | Artificial synapse | (Wang et al., 2019b) |
| n++-Si (bottom) |
Gr, graphene; PVA, polyvinyl alcohol; PTCDA, perylene-3,4,9,10-tetracarboxylic dianhydride.