Fig. 3. Ab initio calculations on the effect of Ivs on carrier cooling.
(A and B) Atom-projected DOS for pristine MAPbI3 (A) and lattice with Iv (B) for representative structures at 300 K. The zero of energy is at the Fermi level. The insets show atomic structures, with the red circle indicating the defect location. The Iv introduces a strong peak in the DOS near the CBM, highlighted with the blue oval. The increased DOS accelerates hot electron cooling. (C) Hot electron relaxation. The relaxation is accelerated by Iv due to the increased DOS near the CBM.