Figure 7.

Effects of different doping schemes on device oxidation. (a) Long-term endurance test of the infrared devices showing the stability difference between electron and hole doping achieved by intercalation of AMIM and TFSI ions. (b, c) Schematic illustration of the graphene oxidation principle with density of state (DOS). (b) Overlapping DOS caused by n-type doping is desired for electron transfer from graphene to electrolyte, which oxidizes graphene. (c) Lowered Fermi level with p-type doping prevents oxidation on graphene and improves device lifetime. (d) Potential pathways of cation deposition on graphene interlayers with side reactions.