Fig. 2. Nonreciprocal charge transport in atomically thin NbSe2.
a, Sketch of the four-terminal device based on atomically thin NbSe2. The magnetic field is perpendicularly to the substrate plane. b, The temperature dependence of the normalized resistance of the NbSe2 device. Inset, an optical image of the four-terminal NbSe2 device with a thickness of five layers. Scale bar, 5 μm. c, d, Temperature-dependent Rω and R2ω of the device under positive and negative magnetic fields applied perpendicularly to the substrate, where Rω(B)-T and Rω(-B)-T curves overlap each other while R2ω(B)-T and R2ω(-B)-T curves are symmetric with respect to the x-axis (I0 = 25 μA and f = 17.1 Hz). e, Magnetoresistance isotherm of the device with the temperature changing from 2 to 7 K, which are symmetric with respect to the y-axis. f, R2ω-B curves of the device at temperatures of 2 to 7 K, showing antisymmetric behavior at T < 7 K, which is consistent with the first harmonic signal in (e). g, The extracted maximum value of R2ω-B curves as a function of temperature. The pink squares stands for the peak values in the larger magnetic field regime, the purple triangles stands for the peak values in the small magnetic field regime at B ≥ 5.25 K. h, Calculated temperature-dependent γ and │γ′│, where and , respectively. γ and γ′ have an opposite sign due to the opposite nonreciprocity. i, Temperature-magnetic field phase diagram of the NbSe2 device. The dark pink dots stand for crossover between the vortex solid (glass) state and vortex liquid state at which R2ω goes to zero. The dark blue dots show the crossing point of the vortex liquid state and normal state. R2ω goes to zero when further increasing the magnetic field. The yellow dots are the crossing point where R2ω changes sign, defining the boundary between the activated pinned vortex states (light blue area) and vortex liquid state at TM ≥ 5.25 K. Here TM is the melting temperature above which the vortex solid melts.