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. 2020 Nov 6;11:5634. doi: 10.1038/s41467-020-19459-5

Fig. 4. Nonreciprocal sensitivity in atomically thin NbSe2 antenna.

Fig. 4

a, Schematic structure of the NbSe2 antenna device for the measurement of DC signal. The nanovoltage meter was directly connected to NbSe2. Sine wave AC signals were applied to the fabricated resistor. b, Optical image of the antenna device, scale bar, 20 μm. The NbSe2 thickness is three layers. c, R-T of the device under negative and positive applied magnetic fields perpendicular to the substrate (with no AC signal applied on the resistor). d, VDC-B of the device with sine wave AC signal (VP-P = 200 mV, fIN = 5.52 MHz) applied on the resistor. e, R-B curves of the device with the temperature changing from 2 to 6.75 K. Inset, the first harmonic signal of the device measured simultaneously with the second harmonic signal. Both the first and second harmonic signals were measured under no AC signal applied to the resistor. f, DC signal VDC-B of the device with the temperature changing from 2 to 6.75 K with sine wave AC signal (VP-P = 200 mV, fIN = 5.52 MHz) applied to the resistor, showing similar antisymmetric behavior to the R-B curves. Inset, DC signal of the device at T = 2 K with no AC signal applied to the resistor. The antisymmetric signal comes from environmental fluctuations.