Fig. 5. Manipulating nonreciprocal sensitivity in NbSe₂ antenna.

a, Color plot of V_DC as a function of the frequency f_IN and magnetic field of the NbSe₂ antenna device at V_P-P = 1 V and T = 2 K. The NbSe₂ thickness is five layers. b, Color plot of V_DC as a function of frequency f_IN and V_P-P of the device at B = 0.12 T and T = 2 K. c, V_DC-B of the device with V_P-P value (that is, the power of the AC signal applied on the resistor) changing from 0 to 1 V at T = 2 K, f_IN = 200 MHz. V_P1-V_P4 are the peak values of V_DC. d, e, Extracted V_MAX1 and V_MAX2 value as a function of V_P-P value, where $V_{MAX1}=\left(∣V_{P1}∣+∣V_{P2}∣\right)/2$, $V_{MAX2}=\left(∣V_{P3}∣+∣V_{P4}∣\right)/2$. Both V_MAX1 and V_MAX2 values increase monotonically as the increase of V_P-P value. f, The dynamic behavior of the device with the AC signal (f_IN = 200 MHz, V_P-P = 1 V) switching on and off at B = 0.08 T and −0.08 T, respectively. g, Retention behavior of the device under various magnetic fields with a frequency of f_IN = 200 MHz, and V_P-P = 1 V at T = 2 K. h, Time evolution of the generated power of a 100 Ω resistor connected to the device (B = 0.1 T, f_IN = 200 MHz, V_P-P = 1 V, T = 2 K), showing a stable detection after 4300 s. Inset, a schematic circuit diagram of the measurement of the generated power on a 100 Ω resistor connected to the device.