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. 2020 Nov 9;11:5670. doi: 10.1038/s41467-020-19420-6

Fig. 3. Alternative Al2O3 growth.

Fig. 3

a Changing ALD growth parameters leads to the reduction of the wetting of the Al2O3 film on graphene. b This translates to a clear signature in transport measurements as shown by the disappearance of tunneling behavior in the dI/dV (lock-in ac + dc measurements). A direct graphene/Co contact is thus defined over a small effective area, allowing the Ni(111)/graphene/Co spin transport properties to be probed.