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. 2020 Oct 26;32(21):9425–9434. doi: 10.1021/acs.chemmater.0c03593

Figure 7.

Figure 7

Influence of grain size and quality of the colloidal monolayer mask on substrate uniformity. (a,b) PS sphere monolayer after self-assembly on silicon (d = 1100 nm). The insets show large-scale photographs. (c,d) SiNW arrays after MACE. (a,c) Substrate with a low degree of order (small grain sizes) led to a destroyed substrate after MACE. p = 1100 nm; d = 713 ± 35 nm; etch rate = 0.24 μm/min; etched during 15 min. (b,d) Substrate with a high degree of order (large grain sizes) led to more homogeneous MACE. p = 1100 nm; d = 709 ± 25 nm; etch rate = 0.28 μm/min; etched during 20 min.