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. Author manuscript; available in PMC: 2020 Nov 18.
Published in final edited form as: Nano Lett. 2016 Sep 22;16(10):6452–6459. doi: 10.1021/acs.nanolett.6b02909

Figure 1.

Figure 1.

Nanoparticle-based MIS and IMIS photoelectrodes. (a) Schematic side views of a metal–insulator–semiconductor (MIS) photoelectrode decorated with electrodeposited Pt nanoparticles and an insulator–metal–insulator–semiconductor (IMIS) photoelectrode containing an additional SiOx overlayer. (b) Cross-sectional HAADF-STEM image of a SiOx/Pt/native SiO2/p-Si IMIS nanojunction based on a 10 nm thick SiOx overlayer with Pt protection layer. (c) Schematic side-view illustrating the basic operating processes occurring in an IMIS photoelectrode. (d) Cross-sectional HAADF-STEM image of an IMIS nanojunction described in (b) with a C protection layer (top) and XEDS map of Pt (red) and Si (green) peak signals (bottom).