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. 2020 Nov 19;9:189. doi: 10.1038/s41377-020-00425-1

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Scanning electron microscopy (SEM) images of InAs NW field-effect transistors labelled NW1 and NW2, with source (S), drain (D), and gate (G) contacts indicated. b The conductivity σ of NW1 (black line) and NW2 (red line) measured at room temperature applying drain-to -source voltage of V_DS = 2 mV for NW1 and V_DS = 5 mV for NW2, reported as a function of the gate voltage V_G.